1/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.06 - rev.b 1.2v drive pch mosfet rzm002p02 z structure z dimensions (unit : mm) silicon p-channel mosfet z features 1) high speed switching. 2) small package (vmt3). 3) ultra low voltage drive. (1.2v drive) z applications z inner circuit switching z packaging specifications package code taping basic ordering unit (pieces) rzm002p02 t2l 8000 type z absolute maximum ratings (ta=25 c) ?1 parameter v v dss symbol v v gss ma i s ma i sp limits unit drain-source voltage gate-source voltage source current (body diode) continuous pulsed ?1 pw10s, duty cycle1% ?2 each terminal mounted on a recommended land ?20 10 ?100 ?800 ?2 mw p d c tch c tstg total power dissipation channel temperature range of storage temperature 150 ?55 to +150 150 ?1 ma i d ma i dp drain current continuous pulsed 200 800 z thermal resistance parameter c/w rth(ch-a) symbol limits unit c hannel to ambient 833 ? each terminal mounted on a recommended land ? (1)gate (2)source (3)drain vmt3 (3) 0.32 0.8 1.2 0.13 0.5 0.22 0.4 0.4 1.2 0.8 0.2 0.2 ( 2 ) ( 1 ) abbreviated symbol : yk (1) gate (2) source (3) drain ?1 esd protection diode ?2 body diode ?2 ?1 (3) (1) (2)
rzm002p02 data sheet 2/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.06 - rev.b z electrical characteristics (ta=25 c) parameter symbol i gss y fs min. ? typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) q g q gs q gd ? ? ? ? ? ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time total gate charge gate-source charge gate-drain charge ?pulsed ? 10 av gs = 10v, v ds =0v ? 20 ?? vi d = ? 1ma, v gs =0v ??? 1 av ds = ? 20v, v gs =0v ? 0.3 ?? 1.0 v v ds = ? 10v, i d = ?100ua ? 0.8 1.2 i d = ? 200ma, v gs = ? 4.5v ? 1.0 1.5 ? ? ? i d = ? 100ma, v gs = ? 2.5v ? 1.3 1.6 2.2 i d = ? 100ma, v gs = ? 1.8v ? 3.5 ? ? i d = ? 40ma, v gs = ? 1.5v ? 2.4 9.6 i d = ? 10ma, v gs = ? 1.2v 0.2 ?? sv ds = ? 10v, i d = ? 200ma ? 115 ? pf v ds = ? 10v ? 10 6 ? pf v gs = 0v ? 6 ? pf f=1mhz ? 1.4 ? ns ? 0.3 ? nc ? 0.3 ? nc ?? nc v dd ? 10 v i d = ? 100ma v gs = ? 4.5v r l 100? r g = 10? v dd ? 10 v, i d = ? 200ma v gs = ? 4.5v r l 50?, r g = 10? t r t d (off) t f ? ? ? rise time turn-off delay time fall time 4 ? 17 ? ns ? 17 ? ns ?? ns z body diode characteristics (source-drain) (ta=25 c) v sd ??? 1.2 v i s = ?200ma, v gs =0v forward voltage parameter symbol min. typ. max. unit conditions ?pulsed ?
rzm002p02 data sheet 3/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.06 - rev.b z electrical characteristic curves 0 0.05 0.1 0.15 0.2 02 46 810 ta=25c pulsed v gs = -1.0v v gs = -1.2v v gs = -4.5v v gs = -2.5v v gs = -1.8v v gs = -1.5v 0 0.05 0.1 0.15 0.2 0 0.2 0.4 0.6 0.8 1 v gs = -2.5v v gs = -2.0v v gs = -1.8v v gs = -10.0v v gs = -4.5v v gs = -3.2v v gs = -1.2v v gs = -1.0v v gs = -1.5v ta=25c pulsed 0.0001 0.001 0.01 0.1 1 0 0.5 1 1.5 v ds = - 10v pulsed ta= 125c ta= 75c ta= 25c ta= - 25c 100 1000 10000 0.001 0.01 0.1 1 v gs = -1.2v v gs = -1.5v v gs = -1.8v v gs = -2.5v v gs = -4.5v ta=25c pulsed 100 1000 10000 0.001 0.01 0.1 1 v gs = -2.5v pulsed ta=125c ta=75c ta=25c ta= -25c 100 1000 10000 0.001 0.01 0.1 1 v gs = -4.5v pulsed ta=125c ta=75c ta=25c ta= -25c 100 1000 10000 0.001 0.01 0.1 1 v gs = -1.8v pulsed ta=125c ta=75c ta=25c ta= -25c fig .1 typical output characteristics( ) fig .2 typical output characteristics( ) fig .3 typical tr ansfer character istics fig .4 static drain-source on- state resistance vs. drain current( ) fig .5 static dr ain- sour ce on-state resistance vs. drain current( ) fig .6 static drain-source on-state resistance vs. drain current( ) fig .7 static drain-source on-state resistance vs. drain current( ) drain current : -i d [a] drain-source voltage : -v ds [v] drain-source voltage : -v ds [v] drain current : -i d [a] drain current : -i d [a] gate-source voltage : -v gs [v] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] 100 1000 10000 0.001 0.01 0.1 v gs = -1.5v pulsed ta=125c ta=75c ta=25c ta= - 25c fig.8 static drain-source on-state resistance vs. drain current( ) drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] 100 1000 10000 0.001 0.01 0.1 v gs = -1.2v pulsed ta= 125c ta= 75c ta= 25c ta= -25c drain-current : -i d [a] fig .9 static dr ain- sour ce on-state resistance vs. drain current( ) static drain-source on-state resistance : r ds (on)[m ? ]
rzm002p02 data sheet 4/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.06 - rev.b z measurement circuit f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90% 10% 10 % 10% pulse width 50% v gs v ds t on t off t r t d(on) t f t d(off) 50% f ig.2-1 gate charge measurement circu it v gs i g (const.) r g v d s d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd z notice this product might cause chip aging and breakd own under the large electrified environment. please consider to design esd protection circuit. 0 1 2 3 4 5 0246810 ta=25c pulsed i d = - 0.01a i d = -0.2a 0.01 0.1 1 00.511.5 v gs =0v pulsed ta= 125c ta=75c ta=25c ta=-25c 0 1 2 3 4 5 00.511.5 ta=25c v dd = -10v i d = -0.2a r g =10 ? pulsed 1 10 100 1000 0.01 0.1 1 10 100 coss crss ta=25c f=1mhz v gs =0v ciss 0.1 1.0 0.01 0.1 1 v ds = -10v pulsed ta=-25c ta=25c ta=75c ta=125c 1 10 100 1000 0.01 0.1 1 t r t f t d (on) t d (off) ta=25c v dd = -10v v gs =-4.5v r g =10 ? pulsed fig .11 reverse drain cur rent vs. sourse-drain voltag e fig .12 static drain-source on- state resistance vs. gate source voltage fig .10 forwar d tr ansfer admittance vs. drain current fig .14 dynamic input character istics fig .15 typical capacitance vs. drain-source voltag e fig.13 switching characteristics forward transfer admittance : |yfs| [s] drain-current : -i d [a] reverse drain current : -is [a] source-drain voltage : -v sd [v] static drain-source on-state resistance : r ds (on)[ =? ] gate-source voltage : -v gs [v] switching time : t [ns] drain-current : -i d [a] gate-source voltage : -v gs [v] total gate charge : qg [nc] drain-source voltage : -v ds [v] capacitance : c [pf]
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